DESIGN AND ANALYSIS OF 2-D PIN PHOTODIODE USING MoS2

Abstract

In the project 'Design and Analysis of Capacitive Accelerometer,' the focus was on
evaluating The integration of two-dimensional materials, such as molybdenum disulfide (MoS2), into
semiconductor devices has attracted significant attention due to their unique electronic properties and
potential for low-power electronics. This research focuses on simulating a PIN (p-type/intrinsic/n-type)
photodiode structure using MoS2 as the intrinsic layer for applications requiring low frequency and low
power consumption. The objective is to investigate the feasibility of MoS2-based PIN photodiodes and
analyse their performance characteristics through numerical simulations. The study aims to contribute
insights into the optimization of next-generation photodiode devices for emerging electronic
applications.
The demand for energy-efficient electronic devices with reduced power consumption and operational
frequencies has driven researchers to explore novel materials and device architectures. Among these
materials, two-dimensional semiconductors like molybdenum disulfide (MoS2) have emerged as
promising candidates for low-power electronics due to their unique electronic properties and scalability.
In this study, we focus on simulating a PIN (p-type/intrinsic/n-type) photodiode structure utilizing
MoS2 as the intrinsic layer. The PIN diode configuration is well-suited for applications requiring low
frequency and minimal power consumption, making it ideal for sensor networks, wearable devices, and
Internet of Things (IoT) applications. The simulation process involves modelling the MoS2-based PIN
photodiode using numerical simulation tools to predict its electrical characteristics under various
operating conditions. Parameters such as carrier mobility, bandgap energy, and responsivity are
considered to optimize the device performance for low-frequency operation.
In conclusion, the simulation of a PIN photodiode using MoS2 material holds great promise for
advancing the field of low-power electronics and optical sensing. This research represents a critical step
towards developing efficient and compact photodiode devices that can meet the growing demand for
energy-efficient electronic systems in various industries